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TPS62122DRVT Datasheet(PDF) 3 Page - Texas Instruments |
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TPS62122DRVT Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 33 page  TPS62120 TPS62122 www.ti.com SLVSAD5 – JULY 2010 RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT Supply voltage VIN, device in operation 2 15 V VIN = 2 V, VOUT = 1.8 V, DCRL = 0.7 Ω 25 Output current capability mA VIN ≥ 2.5 V, VOUT = 1.8 V, DCRL = 0.7 Ω 75 Effective inductance 10 22 33 µH Effective output capacitance 1.0 2 33 µF Output voltage range 1.2 5.5 V Operating ambient temperature TA (1), (Unless Otherwise Noted) –40 85 °C Operating junction temperature range, TJ –40 125 °C (1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package in the application (qJA), as given by the following equation: TA(max) = TJ(max) – (qJA × PD(max)). ELECTRICAL CHARACTERISTICS VIN = 8V, VOUT = 1.8V, EN = VIN, TJ = –40°C to 85°C, typical values are at TJ = 25°C (unless otherwise noted), CIN = 4.7µF, L = 22µH, COUT = 4.7µF, see Parameter Measurement Information PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VIN Input voltage range(1) Device operating 2 15 V IOUT = 0mA, Device not switching, EN = VIN, 11 18 µA regulator sleeps IQ Quiescent current IOUT = 0mA, Device switching, VIN = 8 V, VOUT = 13 µA 1.8V VIN = 5.5 V = VOUT, TJ = 25°C, high-side MOSFET IActive Active mode current consumption 240 275 µA switch fully turned on ISD Shutdown current EN = GND, VOUT = SW = 0 V, VIN = 3.6V (2) 0.3 1.2 µA Falling VIN 1.85 1.95 V VUVLO Undervoltage lockout threshold Rising VIN 2.5 2.61 V ENABLE, THRESHOLD VIH TH Threshold for detecting high EN 2 V ≤ VIN ≤ 15V, rising edge 0.8 1.1 V VIL TH HYS Threshold for detecting low EN 2 V ≤ VIN ≤ 15 V, falling edge 0.4 0.6 V IIN Input bias current, EN EN = GND or VIN 0 50 nA POWER SWITCH VIN = 3.6 V 2.3 3.4 high-side MOSFET on-resistance RDS(ON) VIN = 8V 1.75 2.5 Ω VIN = 3.6 V 1.3 2.5 low-side MOSFET on-resistance VIN = 8V 1.2 1.75 Forward current limit MOSFET ILIMF VIN = 8V, Open loop 200 250 400 mA high-side TSD Thermal shutdown Increasing junction temperature 150 °C Thermal shutdown hysteresis Decreasing junction temperature 20 °C (1) The typical required supply voltage for startup is 2.5V. The part is functional down to the falling UVLO (Under Voltage Lockout) threshold (2) Shutdown current into VIN pin, includes internal leakage Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPS62120 TPS62122 |
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