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NCP1117LPST50T3G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP1117LPST50T3G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 14 page NCP1117LP http://onsemi.com 3 Table 3. ELECTRICAL CHARACTERISTICS (Cin = 10 mF, Cout = 10 mF, for typical value TA = 25°C, for min and max values TA is the operating ambient temperature range that applies unless otherwise noted.) Parameter Conditions Symbol Min Typ Max Unit Reference Voltage, Ad- justable Output Devices NCP1117−ADJ TJ = 25°C (Vin − Vout) = 1.5 V, Io = 10 mA Vref 1.225 1.250 1.275 V Output Voltage, Fixed Output Devices NCP1117−1.5 TJ = 25°C 3 V ≤ Vin ≤ 12 V, Io = 10 mA Vout 1.470 1.5 1.530 V NCP1117−1.8 TJ = 25°C 3.3 V ≤ Vin ≤ 12 V, Io = 10 mA 1.760 1.8 1.840 V NCP1117−2.5 TJ = 25°C 4 V ≤ Vin ≤ 12 V, Io = 10 mA 2.450 2.5 2.550 V NCP1117−3.3 TJ = 25°C 4.8 V ≤ Vin ≤ 12 V, Io = 10 mA 3.235 3.3 3.365 V NCP1117−5.0 TJ = 25°C 6.5 V ≤ Vin ≤ 12 V, Io = 10 mA 4.900 5 5.100 V Line Regulation, Adjustable & Fixed (Note 3) NCP1117−XXX TJ = 25°C Vout + 1.5 V < Vin < 12 V, Io = 10 mA Regline 0.2 % Load Regulation (Note 3) NCP1117−ADJ TJ = 25°C 10 mA < Io < 1 A, Vin = 3.3 V Regload 1 % NCP1117−1.5 TJ = 25°C 10 mA < Io < 1 A, Vin = 3 V 12 15 mV NCP1117−1.8 TJ = 25°C 10 mA < Io < 1 A, Vin = 3.3 V 15 18 mV NCP1117−2.5 TJ = 25°C 10 mA < Io < 1 A, Vin = 4 V 20 25 mV NCP1117−3.3 TJ = 25°C 10 mA < Io < 1 A, Vin = 4.7 V 26 33 mV NCP1117−5.0 TJ = 25°C 10 mA < Io < 1 A, Vin = 6.5 V 40 50 mV Dropout Voltage (Vin – Vout), Adjustable & Fixed NCP1117−XXX Iout = 1 A, TA = 25°C DVout = Vout − 100 mV 1.3 1.4 V Current Limit, Adjustable & Fixed NCP1117−XXX Vin = 7 V, TA = 25°C Iout 1.1 A Minimum Load Current (Note 4) NCP1117−XXX 0°C ≤ Tj ≤ 125°C ILmin 1 5 mA Quiescent Current NCP1117−fixed Vin = 12 V Io = 10 mA IQFIX 550 700 mA NCP1117−ADJ IQADJ 30 50 mA Thermal Regulation (Note 5) TA = 25°C, T = 30 ms pulse 0.008 0.04 %W Ripple Rejection NCP1117−XXX F = 120 Hz, Cout = 25 mF tantalum, Iout = 1 A, Vin = Vout + 3 V RR 60 dB Thermal Shutdown NCP1117−XXX Tshdn 165 °C Thermal Hysteresis NCP1117−XXX Thyst 10 °C 3. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 4. Guaranteed by design. 5. Thermal Regulation is defined as the change in output voltage at a time after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to Iomax at VIN = VIN + 1.5 V for T = 30 msec. Guaranteed by characterization. |
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