CSPEMI306A

Rev. 2 | Page 5 of 13 | www.onsemi.com

ELECTRICAL OPERATING CHARACTERISTICS

1

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

R

Resistance

80

100

120

Ω

C

Capacitance

At 2.5V DC

24

30

36

pF

TCR

Temperature Coefficient of Resistance

1200

ppm/°C

TCC

Temperature Coefficient of Capacitance

At 2.5V DC

-300

ppm/°C

V

DIODE

Diode Voltage (reverse bias)

I

5.5

V

I

LEAK

Diode Leakage Current (reverse bias)

V

100

nA

V

SIG

Signal Voltage

Positive Clamp

Negative Clamp

I

5.6

-0.4

6.8

-0.8

9.0

-1.5

V

V

V

ESD

In-system ESD Withstand Voltage

a) Human Body Model, MIL-STD-883,

Method 3015

b) Contact Discharge per IEC 61000-4-2

Level 4

Notes 2 and 4

±30

±15

kV

kV

V

CL

Clamping Voltage during ESD Discharge

MIL-STD-883 (Method 3015), 8kV

Positive Transients

Negative Transients

Notes 2,3 and 4

+10

-5

V

V

f

C

Cut-off frequency

Z

R = 100Ω, C = 30pF

58

MHz

Note 1: T

Note 2: ESD applied to input and output pins with respect to GND, one at a time.

Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin

A1, then clamping voltage is measured at Pin C1.

Note 4: Unused pins are left open.