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CSPEMI205G Datasheet(PDF) 4 Page - ON Semiconductor

Part # CSPEMI205G
Description  3-Channel Headset Microphone EMI Filter with ESD Protection
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CSPEMI205G Datasheet(HTML) 4 Page - ON Semiconductor

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CSPEMI205G
Rev.
3 | Page 4 of 9 | www.onsemi.com
STANDARD OPERATING CONDITIONS
PARAMETER
RATING
UNITS
Operating Temperature Range
-40 to +85
°C
ELECTRICAL OPERATING CHARACTERISTICS
(NOTE 1)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
R
1
Resistance
9
10
11
R
2
Resistance
54
68
75
C
1
Capacitance
80
100
120
pF
C
2
Capacitance
38
47
57
pF
I
LEAK
Diode Leakage Current
V
IN=5.0V
1.0
µA
V
SIG
Signal Voltage
Positive Clamp
Negative Clamp
I
LOAD = 10mA
5
-15
7
-10
15
-5
V
V
V
ESD
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
Notes 2 and 4
±15
±8
kV
kV
V
CL
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Notes 2,3 and 4
+15
-19
V
V
f
C1
Cut-off frequency 1; Note 5
R = 10Ω, C = 100pF
34
MHz
f
C2
Cut-off frequency 2; Note 5
R = 68Ω, C = 47pF
63
MHz
Note 1: T
A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
A1, then clamping voltage is measured at Pin C1.
Note 4: Unused pins are left open.
Note 5: Z
SOURCE=50Ω, ZLOAD=50Ω


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