CM1436

Rev. 2 | Page 5 of 16 | www.onsemi.com

ELECTRICAL OPERATING CHARACTERISTICS

(SEE NOTE 1)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

R

Resistance

160

200

240

Ω

C

Capacitance

At 2.5V DC, 1MHz, 30mV AC

12

15

18

pF

V

DIODE

Diode Standoff Voltage

I

6.0

V

I

LEAK

Diode Leakage Current (reverse

bias)

V

0.1

1

µ

A

V

SIG

Signal Voltage

Positive Clamp

Negative Clamp

I

I

5.6

-0.4

6.8

-0.8

9.0

-1.5

V

V

V

ESD

In-system ESD Withstand Voltage

a) Human Body Model, MIL-STD-

883, Method 3015

b) Contact Discharge per IEC

61000-4-2 Level 4

Note 2

±

30

±

15

kV

kV

f

C

Cut-off Frequency

Z

R = 200Ω, C = 15pF;

100

MHz

A

1GHz

Absolute Attenuation @ 1GHz from

0dB Level

Z

DC Bias = 0V; Notes 1

35

dB

A

800MHz - 6GHz

Absolute Attenuation @ 800MHz to

6GHz from 0dB Level

Z

DC Bias = 0V; Notes 1 and 3

30

dB

Note 1: T

Note 2: ESD applied to input and output pins with respect to GND, one at a time.

Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.