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H11A817C Datasheet(PDF) 2 Page - QT Optoelectronics |
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H11A817C Datasheet(HTML) 2 Page - QT Optoelectronics |
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2 / 4 page  4–PIN PHOTOTRANSISTOR OPTOCOUPLERS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS INPUT DIODE Forward voltage H11A817 VF 1.2 1.5 V IF = 20 mA H11AA814 VF 1.2 1.5 V IF = ±20 mA Reverse current H11A817 IR .001 10 µA VR = 5 V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVCEO 35 100 V IC = 1 mA, IF = 0 Emitter to collector BVECO 6 10 V IE = 100 µA, IF = 0 Collector dark current ICEO .025 100 nA VCE = 10 V, IF = 0 Capacitance CCE 8 pF VCE = 0 V, f = 1 MHz ELECTRO-OPTICAL CHARACTERISTICS (TA = 25° C Unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS (Applies to all unless indicated otherwise) CHARACTERISTIC SYMBOL MIN TYP MAX UNITS TEST CONDITIONS DC current transfer ratio H11AA814 CTR 20 300 % IF = ±1 mA,VCE = 5V H11AA814A CTR 50 150 % IF = ±1 mA,VCE = 5V H11A817 CTR 50 600 % IF = 5 mA,VCE = 5V H11A817A CTR 80 160 % H11A817B CTR 130 260 % H11A817C CTR 200 400 % H11A817D CTR 300 600 % Saturation Voltage VCE (SAT) 0.1 0.2 V IF = (±)20 mA, IC = 1 mA Rise time (non saturated) tr 2.4 18 µs IC = 2 mA, VCE = 2 V, RL = 100 Ω Fall time (non saturated) tf 2.4 18 µs IC = 2 mA, VCE = 2 V, RL = 100 Ω TRANSFER CHARACTERISTICS CHARACTERISTIC SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Steady-state isolation voltage VISO 5300 VRMS 1 Minute Isolation resistance RISO 10 11 Ω VI-O = 500 VDC Isolation capacitance CISO 0.5 pF VI-O = Ø, f = 1 MHz ISOLATION CHARACTERISTICS |
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Similar Description - H11A817C |
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