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CM1218-04S7 Datasheet(PDF) 4 Page - ON Semiconductor |
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CM1218-04S7 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 17 page CM1218 Rev. 2 | Page 4 of 17 | www.onsemi.com Specifications ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Storage Temperature Range -65 to +150 °C Package Power Dissipation SC70 SOT23-3, SOT23-5, SOT23-6, SOT143 SOT-553, SOT-563 0.2 0.225 0.15 W W W STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature -40 to +85 °C ELECTRICAL OPERATING CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS C IN Channel Input Capacitance T A = 25°C, 2.5VDC, 1MHz 7 pF ΔC IN Differential Channel I/O to GND Capacitance T A = 25°C, 2.5VDC, 1MHz 0.19 pF I R=10μA, TA = 25°C; Note 1 5.5 6.8 8.5 V V RSO Reverse Stand-off Voltage I R=1mA, TA = 25°C; Note 1 6.1 6.8 8.8 V I LEAK Leakage Current V IN=5.0VDC, TA = 25°C; Note 1 1 μA V SIG Small Signal Clamp Voltage Positive Clamp Negative Clamp I = 10mA, T A = 25°C; Note 1 I = -10mA, T A = 25°C 5.5 -0.4 6.8 -0.8 9.0 -1.20 V V V ESD ESD Withstand Voltage Contact Discharge per IEC 61000- 4-2 standard Human Body Model, MIL-STD-883, Method 3015 Notes2 and 3; T A = 25°C Notes1 and 3; T A = 25°C +15 +30 kV kV R D Diode Dynamic Resistance Forward Conduction Reverse Conduction T A = 25°C; Note 1; Applied Pulse Width = 700µs; I MAX = 0.70A. See Figure 2 to calculate R D 0.8 2.2 1.1 2.7 1.4 3.2 Ω Ω Note 1: Human Body Model per MIL-STD-883, Method 3015, C Discharge = 100pF, RDischarge = 1.5KΩ, VN grounded. Note 2: Standard IEC 61000-4-2 with C Discharge = 150pF, RDischarge = 330Ω, VN grounded. Note 3: These measurements performed with no external capacitor on CH X. |
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