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CM1218-04S7 Datasheet(PDF) 4 Page - ON Semiconductor

Part # CM1218-04S7
Description  Low Capacitance Transient Voltage Suppressors / ESD Protectors
Download  17 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CM1218-04S7 Datasheet(HTML) 4 Page - ON Semiconductor

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CM1218
Rev. 2 | Page 4 of 17 | www.onsemi.com
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
Storage Temperature Range
-65 to +150
°C
Package Power Dissipation
SC70
SOT23-3, SOT23-5, SOT23-6, SOT143
SOT-553, SOT-563
0.2
0.225
0.15
W
W
W
STANDARD OPERATING CONDITIONS
PARAMETER
RATING
UNITS
Operating Temperature
-40 to +85
°C
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
C
IN
Channel Input Capacitance
T
A = 25°C, 2.5VDC, 1MHz
7
pF
ΔC
IN
Differential Channel I/O to GND
Capacitance
T
A = 25°C, 2.5VDC, 1MHz
0.19
pF
I
R=10μA, TA = 25°C; Note 1
5.5
6.8
8.5
V
V
RSO
Reverse Stand-off Voltage
I
R=1mA, TA = 25°C; Note 1
6.1
6.8
8.8
V
I
LEAK
Leakage Current
V
IN=5.0VDC, TA = 25°C; Note 1
1
μA
V
SIG
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
I = 10mA, T
A = 25°C; Note 1
I = -10mA, T
A = 25°C
5.5
-0.4
6.8
-0.8
9.0
-1.20
V
V
V
ESD
ESD Withstand Voltage
Contact Discharge per IEC 61000-
4-2 standard
Human Body Model, MIL-STD-883,
Method 3015
Notes2 and 3; T
A = 25°C
Notes1 and 3; T
A = 25°C
+15
+30
kV
kV
R
D
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
T
A = 25°C; Note 1;
Applied Pulse Width = 700µs;
I
MAX = 0.70A. See Figure 2 to
calculate R
D
0.8
2.2
1.1
2.7
1.4
3.2
Ω
Ω
Note 1: Human Body Model per MIL-STD-883, Method 3015, C
Discharge = 100pF, RDischarge = 1.5KΩ, VN grounded.
Note 2: Standard IEC 61000-4-2 with C
Discharge = 150pF, RDischarge = 330Ω, VN grounded.
Note 3: These measurements performed with no external capacitor on CH
X.


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