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CNX82AW Datasheet(PDF) 2 Page - QT Optoelectronics

Part No. CNX82AW
Description  6-pin phototransistor optocouplers
Download  4 Pages
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Maker  QT [QT Optoelectronics]
Homepage  http://www.fairchildsemi.com/
Logo QT - QT Optoelectronics

CNX82AW Datasheet(HTML) 2 Page - QT Optoelectronics

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ELECTRICAL CHARACTERISTICS (T
A = 25°C Unless otherwise specified.)
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
4/13/00
200024D
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 • France 33 [0] 1.45.18.78.78 • Germany 49 [0] 89/96.30.51 • United Kingdom 44 [0] 1296 394499 • Asia/Pacific 603-7352417
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
Parameter
Test Conditions
Symbol
Device
Min
Typ**
Max
Unit
EMITTER
(IF = 10 mA)
VF
ALL
1.2
1.50
V
Input Forward Voltage
Reverse Leakage Current
(VR = 5.0 V)
IR
ALL
0.001
10
µA
DETECTOR
(IC = 1.0 mA, IF = 0)
BVCEO
ALL
50
100
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
(IC = 100 µA, IF = 0)
BVCBO
CNX83A.W
70
120
V
SL5583.W
Emitter-Collector Breakdown Voltage
(IE = 100 µA, IF = 0)
BVECO
ALL
7
10
V
(VCE = 10 V, IF = 0)
ALL
0.001
0.050
CNX82A.W
0.5
10
(VCE = 10 V, IF = 0)
CNX83A.W
Collector-Emitter Dark Current
(TA = 70°C)
ICEO
SL5582.W
0.5
µA
SL5583.W
(VCE = 10 V, IF = 0)
SL5582.W
50
(TA = 100°C)
SL5583.W
Collector-Base Dark Current
(VCB = 10 V)
ICBO
CNX83A.W
20
nA
SL5583.W
Capacitance
(VCE = 0 V, f = 1 MHz)
CCE
ALL
8
pF
INDIVIDUAL COMPONENT CHARACTERISTICS
Note
** Typical values at TA = 25°C


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