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CAT28C256H13A-12T Datasheet(PDF) 7 Page - ON Semiconductor |
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CAT28C256H13A-12T Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 14 page CAT28C256 http://onsemi.com 7 Page Write The page write mode of the CAT28C256 (essentially an extended BYTE WRITE mode) allows from 1 to 64 bytes of data to be programmed within a single EEPROM write cycle. This effectively reduces the byte−write time by a factor of 64. Following an initial WRITE operation (WE pulsed low, for tWP, and then high) the page write mode can begin by issuing sequential WE pulses, which load the address and data bytes into a 64 byte temporary buffer. The page address where data is to be written, specified by bits A6 to A14, is latched on the last falling edge of WE. Each byte within the page is defined by address bits A0 to A5 (which can be loaded in any order) during the first and subsequent write cycles. Each successive byte load cycle must begin within tBLCMAX of the rising edge of the preceding WE pulse. There is no page write window limitation as long as WE is pulsed low within tBLC MAX. Upon completion of the page write sequence, WE must stay high a minimum of tBLC MAX for the internal automatic program cycle to commence. This programming cycle consists of an erase cycle, which erases any data that existed in each addressed cell, and a write cycle, which writes new data back into the cell. A page write will only write data to the locations that were addressed and will not rewrite the entire page. Figure 6. Byte Write Cycle [CE Controlled] ADDRESS DATA OUT DATA IN DATA VALID HIGH−Z WE OE CE tAS tAH tCS tOES tCW tOEH tCH tBLC tDS tDH tWC Figure 7. Page Mode Write Cycle ADDRESS I/O BYTE 0 BYTE 1 BYTE 2 BYTE n BYTE n+1 BYTE n+2 LAST BYTE WE CE OE tWC tBLC tWP |
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