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1990

MOS FIELD EFFECT TRANSISTOR

2SJ210

P-CHANNEL MOSFET

FOR SWITCHING

DATA SHEET

Document No. D17906EJ3V0DS00 (3rd edition)

(Previous No. TC-2293A)

Date Published February 2006 NS CP(K)

Printed in Japan

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

The 2SJ210, P-channel vertical type MOSFET, is a switching

device which can be driven directly by the output of ICs having a

5 V power source.

The 2SJ210 has excellent switching characteristics and is

suitable as a high-speed switching device in digital circuits.

FEATURES

• Directly driven by the output of ICs having a 5 V power source.

• Not necessary to consider driving current because of its high

input impedance.

• Possible to reduce the number of parts by omitting the bias

resistor.

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SJ210

SC-59 (Mini Mold)

Marking: H16

−60

V

m20

V

Drain Current (DC)

m200

mA

Drain Current (pulse)

Note

m400

mA

Total Power Dissipation

200

mW

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

Note PW

≤ 10 ms, Duty Cycle ≤ 50%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit: mm)

2.8 ±0.2

1.5

0.65

+0.1

–0.15

Marking

1

2

3

1. Source

2. Gate

3. Drain

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

<R>

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