Electronic Components Datasheet Search |
|
2SJ210 Datasheet(PDF) 3 Page - Renesas Technology Corp |
|
2SJ210 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. 1990 MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOSFET FOR SWITCHING DATA SHEET Document No. D17906EJ3V0DS00 (3rd edition) (Previous No. TC-2293A) Date Published February 2006 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ210 has excellent switching characteristics and is suitable as a high-speed switching device in digital circuits. FEATURES • Directly driven by the output of ICs having a 5 V power source. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. ORDERING INFORMATION PART NUMBER PACKAGE 2SJ210 SC-59 (Mini Mold) Marking: H16 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −60 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) ID(DC) m200 mA Drain Current (pulse) Note ID(pulse) m400 mA Total Power Dissipation PT 200 mW Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 2.8 ±0.2 1.5 0.65 +0.1 –0.15 Marking 1 2 3 1. Source 2. Gate 3. Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain <R> <R> |
Similar Part No. - 2SJ210 |
|
Similar Description - 2SJ210 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |