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74HC138DR2G Datasheet(PDF) 4 Page - ON Semiconductor

Part No. 74HC138DR2G
Description  1−of−8 Decoder/ Demultiplexer High−Performance Silicon−Gate CMOS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

74HC138DR2G Datasheet(HTML) 4 Page - ON Semiconductor

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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
(V)
Guaranteed Limit
Unit
−55_C to 25_C
v 85_C
v 125_C
VIH
Minimum High−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum Low−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL |Iout| v 2.4 mA
|Iout| v 4.0 mA
|Iout| v 5.2 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
VOL
Maximum Low−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL |Iout| v 2.4 mA
|Iout| v 4.0 mA
|Iout| v 5.2 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
Iin
Maximum Input Leakage
Current
Vin = VCC or GND
6.0
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 mA
6.0
4
40
40
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Symbol
Parameter
VCC
(V)
Guaranteed Limit
Unit
−55_C to 25_C
v 85_C
v 125_C
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 4)
2.0
3.0
4.5
6.0
135
90
27
23
170
125
34
29
205
165
41
35
ns
tPLH,
tPHL
Maximum Propagation Delay, CS1 to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
110
85
22
19
140
100
28
24
165
125
33
28
ns
tPLH,
tPHL
Maximum Propagation Delay, CS2 or CS3 to Output Y
(Figures 3 and 4)
2.0
3.0
4.5
6.0
120
90
24
20
150
120
30
26
180
150
36
31
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 2 and 4)
2.0
3.0
4.5
6.0
75
30
15
13
95
40
19
16
110
55
22
19
ns
Cin
Maximum Input Capacitance
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
CPD
Power Dissipation Capacitance (Per Package)*
Typical @ 25°C, VCC = 5.0 V
pF
55
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).


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