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LTC4361IDC-2-TRPBF Datasheet(PDF) 3 Page - Linear Technology |
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LTC4361IDC-2-TRPBF Datasheet(HTML) 3 Page - Linear Technology |
3 / 16 page LTC4361-1/LTC4361-2 3 436112f ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to GND unless otherwise specified. The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 5V, VON = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Supplies VIN Input Voltage Range l 2.5 80 V VIN(UVL) Input Undervoltage Lockout VIN Rising l 1.8 2.1 2.45 V IIN Input Supply Current VON = 0V l 220 400 μA VON = 2.5V l 1.5 10 μA Thresholds VIN(OV) IN Pin Overvoltage Threshold VIN Rising l 5.684 5.8 5.916 V ΔVOV Overvoltage Hysteresis l 25 100 200 mV ΔVOC Overcurrent Threshold VIN – VSENSE l 45 50 55 mV External Gate Drive ΔVGATE External N-Channel MOSFET Gate Drive (VGATE – VOUT) 2.5V ≤ VIN < 3V, IGATE = –1μA 3V ≤ VIN < 5.5V, IGATE = –1μA l l 3.5 4.5 4.5 6 6 7.9 V V VGATE(TH) GATE High Threshold for PWRGD Status VIN = 3.3V VIN = 5V l l 5.7 6.7 6.3 7.2 6.8 7.8 V V IGATE(UP) GATE Pull-Up Current VGATE = 1V l –5 –10 –15 μA VGATE(UP) GATE Ramp-Up VGATE = 1V to 7V l 1.5 3 4.5 V/ms IGATE(FST) GATE Pull-Down Current Fast Turn-Off, VIN = 6V, VGATE = 9V l 15 30 60 mA IGATE(DN) GATE Pull-Down Current VON = 2.5V, VGATE = 9V l 10 40 80 μA Input Pins IOUT(IN) OUT Input Current VOUT = 5V, VON = 0V VOUT = 5V, VON = 2.5V l l 510 0 20 ±3 μA μA VON(TH) ON Input Threshold l 0.4 1.5 V ION ON Pull-Down Current VON = 2.5V l 2.5 5 10 μA Output Pins VGATEP(CLP) IN to GATEP Clamp Voltage l 5 5.8 7.5 V RGATEP GATEP Resistive Pull-Down VGATEP = 3V l 0.8 2 3.2 MΩ VPWRGD(OL) PWRGD Output Low Voltage VIN = 5V, IPWRGD = 3mA l 0.23 0.4 V RPWRGD PWRGD Pull-Up Resistance to OUT VIN = 6.5V, VPWRGD = 1V l 250 500 800 kΩ Delay tON GATE On Delay VIN High to IGATE = –5μA l 50 130 200 ms tOFF GATE Off Propagation Delay VIN = Step 5V to 6.5V VIN – VSENSE = Step 0mV to 100mV l l 5 0.25 10 1 20 μs μs tPWRGD PWRGD Delay VIN = Step 5V to 6.5V VGATE > VGATE(TH) to PWRGD Low l l 25 0.25 65 1 100 μs ms tON(OFF) ON High to GATE Off VON = Step 0V to 2.5V l 25 μs Note 3: An internal clamp limits VGATE to a minimum of 4.5V above VOUT. Driving this pin to voltages beyond this clamp may damage the device. |
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