Super Fast Recovery Diode

RFU20TM5S



Series



Dimensions(Unit : mm)



Structure

Ultra Fast Recovery



Applications

General rectification



Features

1)Cathode common Single type.(TO-220)

2)Ultra high switching speed



Construction

Silicon epitaxial planer



Absolute maximum ratings(Tc=25

C)

Symbol

Io

Tj

Tstg



Electrical characteristics(Tj=25

C)

Symbol

Unit

Forward voltage

V

μA

trr

ns

Thermal Resistance

Rth(j-c)

C/W

Parameter

Conditions

Limits

Unit

junction to case

-

-

1.8

10

Reverse recovery time

-23

30

Reverse current

-

0.05

-

1.65

2

V

Parameter

Conditions

Min.

Typ.

Max.

V

60Hz half sin wave, Resistance load,

Tc=95

C

20

Direct voltage

Repetitive peak reverse voltage

Duty

0.5

Reverse voltage

530

530

A

Forward current surge peak

100

A

Average rectified forward current

one cycle peak value, Tj=25

C

60Hz half sin wave, Non-repetitive

Junction temperature

150

C

Storage temperature

-55to+150

C

(1)

(2)

(3)

(1) (2) (3)

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2010.01 - Rev.A

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