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IRFH5210TR2PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFH5210TR2PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  www.irf.com 1 04/12/10 IRFH5210PbF HEXFET® Power MOSFET Notes through
are on page 8 PD - 97490 Features and Benefits Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters PQFN 5X6 mm Note Form Quantity IRFH5210TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5210TR2PBF PQFN 5mm x 6mm Tape and Reel 1000 Orderable part number Package Type Standard Pack Features Benefits Low RDSon ( ≤ 14.9mΩ at Vgs = 10V) Lower Conduction Losses Low Thermal Resistance to PCB ( ≤ 1.2°C/W) Enables better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( ≤ 0.9 mm) results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation g PD @ TC(Bottom) = 25°C Power Dissipation g Linear Derating Factor g W/°C TJ Operating Junction and TSTG Storage Temperature Range -55 to + 150 3.6 0.029 104 Max. 10 35 220 ±20 100 8.1 55 V W A °C VDS 100 V RDS(on) max (@VGS = 10V) 14.9 m Ω Qg (typical) 39 nC RG (typical) 1.8 Ω ID (@Tc(Bottom) = 25°C) 55 A |
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