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IRFH5206TR2PBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFH5206TR2PBF
Description  HEXFET Power MOSFET
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFH5206TR2PBF Datasheet(HTML) 1 Page - International Rectifier

  IRFH5206TR2PBF Datasheet HTML 1Page - International Rectifier IRFH5206TR2PBF Datasheet HTML 2Page - International Rectifier IRFH5206TR2PBF Datasheet HTML 3Page - International Rectifier IRFH5206TR2PBF Datasheet HTML 4Page - International Rectifier IRFH5206TR2PBF Datasheet HTML 5Page - International Rectifier IRFH5206TR2PBF Datasheet HTML 6Page - International Rectifier IRFH5206TR2PBF Datasheet HTML 7Page - International Rectifier IRFH5206TR2PBF Datasheet HTML 8Page - International Rectifier  
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www.irf.com
1
3/15/10
IRFH5206PbF
HEXFET® Power MOSFET
Notes
 through † are on page 8
PD -97466
Features and Benefits
Features
Benefits
PQFN 5X6 mm
Note
Form
Quantity
IRFH5206TRPBF
PQFN 5mm x 6mm
Tape and Reel
4000
IRFH5206TR2PBF
PQFN 5mm x 6mm
Tape and Reel
400
Orderable part number
Package Type
Standard Pack
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Low RDSon (≤ 7.0mΩ at Vgs=10V)
Lower Conduction Losses
Low Thermal Resistance to PCB (
≤ 1.2°C/W)
Enable better thermal dissipation
100% Rg tested
Increased Reliability
Low Profile (
≤ 0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
g
PD @ TC(Bottom) = 25°C
Power Dissipation
f
Linear Derating Factor (Bottom)
f
W/°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
-55 to + 150
3.6
0.83
100
Max.
16
56
350
± 20
60
13
89
V
W
A
°C
VDS
60
V
RDS(on) max
(@VGS = 10V)
6.7
m
:
Qg (typical)
40
nC
RG (typical)
1.7
:
ID
(@Tc(Bottom) = 25°C)
89
A


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