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IRFH5206TR2PBF Datasheet(PDF) 6 Page - International Rectifier

Part No. IRFH5206TR2PBF
Description  HEXFET Power MOSFET
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFH5206TR2PBF Datasheet(HTML) 6 Page - International Rectifier

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IRFH5206PbF
6
www.irf.com
Fig 16.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

1K
VCC
DUT
0
L
S


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