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IRFH5206TR2PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFH5206TR2PBF
Description  HEXFET Power MOSFET
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFH5206TR2PBF Datasheet(HTML) 2 Page - International Rectifier

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IRFH5206PbF
2
www.irf.com
S
D
G
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC (Bottom)
Junction-to-Case
f
–––
1.2
RθJC (Top)
Junction-to-Case
f
–––
15
°C/W
RθJA
Junction-to-Ambient
g
–––
35
RθJA (<10s)
Junction-to-Ambient
g
–––
22
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
5.6
6.7
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-9.7
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
73
–––
–––
S
Qg
Total Gate Charge
–––
40
60
Qgs1
Pre-Vth Gate-to-Source Charge
–––
6.2
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
3.4
–––
Qgd
Gate-to-Drain Charge
–––
12
–––
Qgodr
Gate Charge Overdrive
–––
18.4
–––
See Fig.17 & 18
Qsw
Switch Charge (Qgs2 + Qgd)
–––
15.4
–––
Qoss
Output Charge
–––
14
–––
nC
RG
Gate Resistance
–––
1.7
–––
Ω
td(on)
Turn-On Delay Time
–––
6.4
–––
tr
Rise Time
–––
11
–––
td(off)
Turn-Off Delay Time
–––
22
–––
tf
Fall Time
–––
8.2
–––
Ciss
Input Capacitance
–––
2490
–––
Coss
Output Capacitance
–––
360
–––
Crss
Reverse Transfer Capacitance
–––
160
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
26
39
ns
Qrr
Reverse Recovery Charge
–––
110
165
nC
ton
Forward Turn-On Time
Time is dominated by parasitic Inductance
VDS = VGS, ID = 100μA
A
89
–––
–––
350
–––
–––
nA
ns
50
ƒ = 1.0MHz
VDS = 30V
–––
Typ.
–––
RG=1.8Ω
pF
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 50A e
MOSFET symbol
VDS = 16V, VGS = 0V
VDD = 30V, VGS = 10V
ID = 50A
VGS = 0V
VDS = 25V
Conditions
See Fig.15
Max.
87
TJ = 25°C, IF = 50A, VDD = 30V
di/dt = 500A/μs
TJ = 25°C, IS = 50A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 50A
VDS = 60V, VGS = 0V, TJ = 125°C
μA
ID = 50A
VGS = 20V
VGS = -20V
VDS = 60V, VGS = 0V
nC
VGS = 10V


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