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RJK6024DPD Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJK6024DPD
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK6024DPD Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJK6024DPD
Preliminary
REJ03G1936-0100 Rev.1.00
Page 4 of 6
Jun 01, 2010
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0.6
0.5
0.4
0.3
0.2
0.1
800
0
16
600
12
400
8
200
0
4
24
68
10
0
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Gate Charge Qg (nC)
Dynamic Input Characteristics (Typical)
0
0.4
0.8
1.2
1.6
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Case Temperature
Tc (
°C)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
0
-25
02550
75
100 125
150
VDS
VGS
VDD = 480 V
300 V
100 V
VDD = 480 V
300 V
100 V
VDS = 10 V
1 mA
0.1 mA
ID = 0.4 A
Ta = 25
°C
VGS = 0 V
Ta = 25
°C
Pulse Test
0200
100
50150300
250
100
1
10
0.1
VGS = 0
f = 1 MHz
Ta = 25
°C
Ciss
Coss
Crss
ID = 10 mA


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