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RJK0206DPA-00-J53 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJK0206DPA-00-J53
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0206DPA-00-J53 Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJK0206DPA
Preliminary
REJ03G1923-0200 Rev.2.00
Page 4 of 6
Apr 27, 2010
5
4
3
2
1
–25
0
25
50
75
100 125
150
0
10 V
150
120
90
60
30
25
50
75
100
125
150
0
100
80
60
40
20
0
0.4
0.8
1.2
1.6
2.0
010
5
25
20
15
100000
30000
10000
3000
1000
300
100
Crss
Coss
Ciss
50
40
30
20
10
0
20
16
12
8
4
20
40
60
80
100
0
0
5 V
10 V
Case Temperature Tc (°C)
Static Drain to Source On State Resistance
vs. Temperature
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
ID = 5 A, 10 A, 20 A
5 A, 10 A, 20 A
VGS = 4.5 V
Pulse Test
VGS = 0
f = 1 MHz
Gate Charge Qg (nc)
Dynamic Input Characteristics
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
ID = 70 A
VGS
VDS
VDD = 20 V
10 V
VDD = 20 V
10 V
Pulse Test
VGS = 0, –5 V
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
IAP = 31 A
VDD = 15 V
duty < 0.1%
Rg
≥ 50 Ω


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