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R2J20651NP Datasheet(PDF) 7 Page - Renesas Technology Corp

Part No. R2J20651NP
Description  Integrated Driver - MOS FET (DrMOS)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R2J20651NP Datasheet(HTML) 7 Page - Renesas Technology Corp

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R2J20651NP
REJ03G1743-0400 Rev.4.00 Mar 12, 2010
Page 5 of 17
Electrical Characteristics
(Ta = 25
C, VCIN = 5 V, VDRV = 5 V, VSWH = 0 V, unless otherwise specified)
Item
Symbol
Min
Typ
Max
Units
Test Conditions
VCIN start threshold
VH
3.1
3.5
3.9
V
VCIN shutdown threshold
VL
2.7
3.0
3.3
V
UVLO hysteresis
dUVL
0.5
V
VH – VL
VCIN operating current
ICIN
29
mA
fPWM = 1 MHz,
Ton_pwm = 120 ns
Supply
VCIN disable current
ICIN-DISBL
50
A
DISBL# = 0 V, PWM = 0 V,
LSDBL# = Open
PWM rising threshold
VH-PWM
1.7
2.1
2.5
V
PWM falling threshold
VL-PWM
0.9
1.2
1.5
V
PWM input resistance
RIN-PWM
42
70
98
k
PWM = 1 V
Tri-state shutdown window
VIN-SD
VL-PWM
VH-PWM
V
PWM
input
Shutdown hold-off time
tHOLD-OFF *
1
240
ns
Disable threshold
VDISBL
0.9
1.2
1.5
V
Enable threshold
VENBL
1.9
2.4
2.9
V
DISBL#
input
Input current
IDISBL
0.5
2.0
A
DISBL# = 1 V
Low-side activation threshold
VLSDBLH
1.9
2.4
2.9
V
Low-side disable threshold
VLSDBLL
0.9
1.2
1.5
V
LSDBL#
input
Input current
ILSDBL
–54
–27
–13.5
A
LSDBL# = 1 V
Warning temperature
TTHWN *
1
110
130
°C
Driver IC temperature
Temperature hysteresis
THYS *
1
15
°C
THWN on resistance
RTHWN *
1
1.0
2.5
4.0
k
THWN = 1 V
Thermal
warning
THWN leakage current
ILEAK
0.001
1.0
A
THWN = 5 V
Note:
1. Reference values for design. Not 100% tested in production.


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