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PBSS4021NT Datasheet(PDF) 4 Page - NXP Semiconductors |
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PBSS4021NT Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 14 page PBSS4021NT_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 31 January 2010 4 of 14 NXP Semiconductors PBSS4021NT 20 V, 4.3 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] -- 320 K/W [2] -- 190 K/W [3] -- 115 K/W Rth(j-sp) thermal resistance from junction to solder point -- 62 K/W FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab955 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 |
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