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TPCP8103-H Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPCP8103-H Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCP8103-H 2009-12-10 5 VDD = −32 V −50 0 −10 −20 −30 −40 25 0 5 10 15 20 −20 0 −4 −8 −12 −16 VDS VGS −8 −16 VDD = −32 V −16 −8 0 0 40 80 120 160 0.5 1 1.5 2 ① ② 160 −80 −40 0 40 80 120 −2 0 −0.4 −0.8 −1.2 −2.6 −0.01 −0.1 −10 −100 Crss 10000 100 1000 10 Coss Ciss −1 VGS = 1V 0 −100 0.2 0.4 0.6 0.8 1 1.2 −1 −10 −1 −10 −3 −5 0 160 0 −80 −40 0 40 80 20 40 60 80 120 100 VGS = −4.5V VGS = −10V ID = −1.2, −2.4, −4.8 A ID = −1.2, −2.4, −4.8 A Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) PD – Ta Total gate charge Qg (nC) Dynamic input/output characteristics Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source Ta = 25°C Pulse test Common source VDS = −10 V ID = −1 mA Pulse test Common source ID = − 4.8 A Ta = 25°C Pulse test Common source Pulse test ① Device mounted on a glass-epoxy board (a) (Note 2a) ② Device mounted on a glass-epoxy board (b) (Note 2b) t = 5s |
Similar Part No. - TPCP8103-H_09 |
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Similar Description - TPCP8103-H_09 |
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