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TPC8A01 Datasheet(PDF) 10 Page - Toshiba Semiconductor |
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TPC8A01 Datasheet(HTML) 10 Page - Toshiba Semiconductor |
10 / 12 page TPC8A01 2006-11-16 10 Q2(Includes Schottky Barrier Diode) rth − tw Pulse width tw (S) Drain-source voltage VDS (V) Safe operating area 0.1 0.001 0.01 0.1 1 10 100 1000 1 0.3 0.5 3 5 10 30 50 100 300 1000 500 (1) (2) (3) (4) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) Single pulse 0.1 1 10 100 0.01 0.1 1 10 100 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (pulse) * 1 ms * 10 ms * VDSS max Single-device value at dual operation (Note 3b) |
Similar Part No. - TPC8A01_06 |
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Similar Description - TPC8A01_06 |
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