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SSM6N7002BFE Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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SSM6N7002BFE Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page SSM6N7002BFE 2009-11-27 3 (Q1, Q2 Common) 300 RDS (ON) – ID Drain current ID (mA) 10 30 0 100 1000 5 1 VGS = 10 V 5.0 V 4.5 V 4 3 2 Common Source Ta = 25°C Ambient temperature Ta (°C) RDS (ON) – Ta 0 −50 0 50 150 100 5 2 Common Source ID = 500 mA / VGS = 10 V 100 mA / 4.5 V 100 mA / 5.0V 4 3 1 Ambient temperature Ta (°C) Vth – Ta 3.0 0 −50 0 150 2.0 50 100 1.0 Common Source VDS = 10 V ID = 0.25 mA Gate–source voltage VGS (V) ID – VGS 1000 0 10 100 0.1 1 0.01 5.0 4.0 -25 °C 2.0 3.0 1.0 Common Source VDS = 10 V 25 °C Ta = 100 °C Drain–source voltage VDS (V) ID – VDS 0 400 0 0.4 0.8 1.2 2.0 200 1.6 600 800 10 V Common Source Ta = 25 °C 7.0 V 3.5 V VGS = 3.3 V 4.5 V 1000 5.0 V 4.0 V 0 10 Gate–source voltage VGS (V) 0 RDS (ON) – VGS 20 2 25 °C 5 Ta = 100 °C -25 °C ID = 100 mA Common Source Ta = 25°C 4 3 1 |
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