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SSM6N37CTD Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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SSM6N37CTD Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page SSM6N37CTD 2009-08-11 2 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 1 mA, VGS = -10 V 12 ⎯ ⎯ V Drain cutoff current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 100 mA (Note 2) 0.14 0.28 ⎯ S ID = 100 mA, VGS = 4.5 V (Note 2) ⎯ 1.65 2.20 ID = 50 mA, VGS = 2.5 V (Note 2) ⎯ 2.16 3.02 ID = 20 mA, VGS = 1.8 V (Note 2) ⎯ 2.66 4.05 Drain-source ON-resistance RDS (ON) ID = 10 mA, VGS = 1.5 V (Note 2) ⎯ 3.07 5.60 Ω Input capacitance Ciss ⎯ 12 ⎯ Output capacitance Coss ⎯ 5.5 ⎯ Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 4.1 ⎯ pF Turn-on time ton ⎯ 18 ⎯ Switching time Turn-off time toff VDD = 10 V, ID = 100 mA VGS = 0 to 2.5 V, RG = 50 Ω ⎯ 36 ⎯ ns Drain-source forward voltage VDSF ID = -250 mA, VGS = 0 V (Note 2) ⎯ -0.9 -1.2 V Note 2: Pulse test Switching Time Test Circuit (Q1, Q2 Common) Precaution Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the SSM6N37CTD). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) VOUT 2.5 V ton toff 0 V VDD VDS (ON) tr tf 10% 90% 90% 10% (a) Test Circuit VDD = 10 V RG = 50 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 0 2.5 V IN OUT VDD 10 μs (b) VIN |
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