SSM6N37CTD datasheet(2/5 Pages) TOSHIBA

Part #	SSM6N37CTD

Description	Power Management Switch Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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SSM6N37CTD

2009-08-11

2

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

V (BR) DSS

ID = 1 mA, VGS = 0 V

20

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 1 mA, VGS = -10 V

12

⎯

V

Drain cutoff current

IDSS

VDS = 20 V, VGS = 0 V

⎯

1

μA

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V

⎯

±1

μA

Gate threshold voltage

Vth

VDS = 3 V, ID = 1 mA

0.35

⎯

1.0

V

Forward transfer admittance

|Yfs|

VDS = 3 V, ID = 100 mA

(Note 2)

0.14

0.28

⎯

S

ID = 100 mA, VGS = 4.5 V (Note 2)

⎯

1.65

2.20

ID = 50 mA, VGS = 2.5 V

(Note 2)

⎯

2.16

3.02

ID = 20 mA, VGS = 1.8 V

(Note 2)

⎯

2.66

4.05

Drain-source ON-resistance

RDS (ON)

ID = 10 mA, VGS = 1.5 V

(Note 2)

⎯

3.07

5.60

Ω

Input capacitance

Ciss

⎯

12

⎯

Output capacitance

Coss

⎯

5.5

⎯

Reverse transfer capacitance

Crss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

4.1

⎯

pF

Turn-on time

ton

⎯

18

⎯

Switching time

Turn-off time

toff

VDD = 10 V, ID = 100 mA

VGS = 0 to 2.5 V, RG = 50 Ω

⎯

36

⎯

ns

Drain-source forward voltage

VDSF

ID = -250 mA, VGS = 0 V (Note 2)

⎯

-0.9

-1.2

V

Note 2: Pulse test

Switching Time Test Circuit (Q1, Q2 Common)

Precaution

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the

SSM6N37CTD). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than

Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

(c) VOUT

2.5 V

ton

toff

0 V

VDD

VDS (ON)

tr

tf

10%

90%

10%

(a) Test Circuit

VDD = 10 V

RG = 50 Ω

D.U.

≤ 1%

VIN: tr, tf < 5 ns

Common Source

Ta

= 25°C

0

2.5 V

IN

OUT

VDD

10

μs

(b) VIN

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