SSM5G10TU

2008-09-27

1

Silicon P Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode

SSM5G10TU

DC-DC Converter Applications

• 1.8-V drive

• Combines a P-channel MOSFET and a Schottky barrier diode in one

package.

Absolute Maximum Ratings

MOSFET (Ta

= 25°C)

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

−20

V

Gate-Source voltage

± 8

V

DC

−1.5

Drain current

Pulse

−3.0

A

0.5

Drain power dissipation

t

= 10 s

0.8

W

Channel temperature

150

°C

Characteristics

Symbol

Rating

Unit

Repetitive peak reverse voltage

20

V

Average forward current

0.7

A

Peak one cycle surge forward current

2 (50 Hz)

A

Junction temperature

125

°C

Characteristics

Symbol

Rating

Unit

Storage temperature range

−55 to 125

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm

Marking

Unit: mm

UFV

JEDEC

―

JEITA

―

TOSHIBA

2-2R1A

Weight: 7 mg (typ.)

5

1

3

KET

2

4

5

13

2

4