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SSM5G10TU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM5G10TU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 8 page SSM5G10TU 2008-09-27 1 Silicon P Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications • 1.8-V drive • Combines a P-channel MOSFET and a Schottky barrier diode in one package. • Low RDS(ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ± 8 V DC ID −1.5 Drain current Pulse IDP (Note 2) −3.0 A PD (Note 1) 0.5 Drain power dissipation t = 10 s 0.8 W Channel temperature Tch 150 °C Schottky Barrier Diode (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 20 V Average forward current IF(AV) 0.7 A Peak one cycle surge forward current IFSM 2 (50 Hz) A Junction temperature Tj 125 °C MOSFET and Diode (Ta = 25°C) Characteristics Symbol Rating Unit Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2 Marking Equivalent Circuit (top view) Unit: mm UFV JEDEC ― JEITA ― TOSHIBA 2-2R1A Weight: 7 mg (typ.) 5 1 3 KET 2 4 5 13 2 4 |
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