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RB521ZS8A30 Datasheet(PDF) 1 Page - Rohm |
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RB521ZS8A30 Datasheet(HTML) 1 Page - Rohm |
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1 / 1 page Copyright © 1997-2010 ROHM CO.,LTD. Outline 1.6x0.8(t=0.3) Dimensions Equivalent circuit diagram [ Product description ] ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics. EUltra-small mold type. EMulti-diodes package. Features Product specifications Absolute maximum ratings (Ta=25ºC) Rated parameters Standard value Conditions Repetitive peak reverse voltage V RM(V) 30 Reverse voltage(DC) V R(V) 30 Average rectified forward current I O(A) 0.1 Forward current surge peak I FSM(A) 0.5 60Hz/1cyc Junction temperature Tj(ºC) 150 Storage temperature Tstg(ºC) -55 to +150 *The contents described here are just outline for introduction. Please obtain the specification sheets from us for thorough check before use. Schottky Barrier Diodes RB521ZS8A30 Page 1 of 1 RB521ZS8A30 | Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. 6/17/2010 http://www.rohm.com/products/discrete/diode/schottky_barrier/rb521zs8a30/print.html |
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