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LTC4360-1 Datasheet(PDF) 10 Page - Linear Technology |
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LTC4360-1 Datasheet(HTML) 10 Page - Linear Technology |
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10 / 12 page  LTC4360-1/LTC4360-2 10 436012f APPLICATIONS INFORMATION Figure 10. Recommended Layout for N-Channel MOSFET and P-/N-Channel MOSFET Configurations If the voltage rise at VOUT due to the discharge of the energy in LIN into COUT is not acceptable or the avalanche capability of the MOSFET is exceeded, an additional exter- nal clamp such as the SMAJ24A can be placed between IN and GND. COUT is the decoupling capacitor of the protected circuits and its value will largely be determined by their requirements. Using a larger COUT will work with LIN to slow down the dV/dt at OUT, allowing time for the LTC4360 to shut off the MOSFET before VOUT overshoots to a dangerous voltage. A larger COUT also helps to lower the ΔVOUT due to the discharge of the energy in LIN if the MOSFET BVDSS is used as an input clamp. Layout Considerations Figure 10 shows example PCB layouts for the single N-channel MOSFET (SC70 package) configuration and the P-channel MOSFET/N-channel MOSFET (Complementary P, N MOSFET in TSOP-6 package) configuration. Keep the traces to the MOSFETs wide and short. The PCB traces associated with the power path through the MOSFETs should have low resistance. Si3590DV 436012 F09 Si1470DH SUPPLY/IN SUPPLY IN OUT OUT GND GND 1 2 3 4 8 7 6 5 LTC4360-2 1 2 3 4 8 7 6 5 LTC4360-1 Figure 8. Setup for Testing 20V Plugged into 5V System LOAD 436012 F07 OUT COUT M1 Si1470DH IN LIN RIN 20V WALL ADAPTER 5V USB LTC4360 IN R1 100k D1 B160 OUT GND GATE + – + – ICABLE Figure 9. Overvoltage Protection Waveforms When 20V Plugged into 5V System VIN 20V/DIV VGATE 10V/DIV VOUT 5V/DIV ICABLE 10A/DIV 1μs/DIV 436012 F08 FIGURE 8 CIRCUIT RIN = 150mΩ, LIN = 2μH LOAD = 10Ω, COUT = 10μF (16V, SIZE 1210) Figure 8 shows a particularly severe situation which can occur in a mobile device with dual power inputs. A 20V wall adaptor is mistakenly hot-plugged into the 5V device with the USB input already live. As shown in Figure 9, a large current can build up in LIN to charge up COUT. When the N-channel MOSFET shuts off, the energy stored in LIN is dumped into COUT, causing a large 40V input transient. The LTC4360 limits this to a 1V rise in the output voltage. |
Similar Part No. - LTC4360-1 |
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Similar Description - LTC4360-1 |
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