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TPCA8003-H Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # TPCA8003-H
Description  High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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TPCA8003-H
2003-8-7
3
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.1
2.3
V
VGS = 4.5 V, ID = 18 A
7.3
9.5
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 18 A
5.1
6.6
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 18 A
30
60
S
Input capacitance
Ciss
1465
Reverse transfer capacitance
Crss
175
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
610
pF
Rise time
tr
4
Turn-ON time
ton
11
Fall time
tf
10
Switching time
Turn-OFF time
toff
Duty <= 1%, tw = 10 µs
36
ns
VDD ∼− 24 V, VGS = 10 V, ID = 35 A
25
Total gate charge
(gate-source plus gate-drain)
Qg
VDD ∼− 24 V, VGS = 5 V, ID = 35 A
13
Gate-source charge 1
Qgs1
5.8
Gate-drain (“miller”) charge
Qgd
5.1
Gate switch charge
QSW
VDD ∼− 24 V, VGS = 10 V, ID = 35 A
8.4
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
105
A
Forward voltage (diode)
VDSF
IDR = 35 A, VGS = 0 V
−1.2
V
VDD ∼− 15 V
0 V
VGS
10 V
ID = 18 A
VOUT


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