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DG509AEWE Datasheet(PDF) 2 Page - Maxim Integrated Products |
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DG509AEWE Datasheet(HTML) 2 Page - Maxim Integrated Products |
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2 / 9 page  Monolithic CMOS Analog Multiplexers 2 _______________________________________________________________________________________ ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (V+ = 15V, V- = -15V, VGND = 0V, TA = +25°C, unless otherwise noted.) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage Referenced to V- V+ .....................................................................................+44V GND ................................................................................. +25V Digital Inputs, VS and VD (Note 1)...................-2V to (V+ + 2V) or 20mA, whichever occurs first Current (any terminal, except S or D) .................................30mA Continuous Current, S or D .................................................20mA Peak Current, S or D (pulsed at 1ms, 10% duty cycle max) ..40mA Continuous Power Dissipation (TA = +70°C) Plastic DIP (derate 10.53mW/°C above +70°C) ...........842mW Narrow SO (derate 8.70mWI°C above +70°C) .............696mW Wide SO (derate 9.52mW/°C above +70°C).................762mW CERDIP (derate 10.00mW/°C above +70°C) ................800mW Operating Temperature Ranges: DG50_ACJ/CWE ..................................................0°C to +70°C DG50_ABK........................................................-20°C to +85°C DG50_ADJ/DY/EWE..........................................-40°C to +85°C DG50_AAK/MY ...............................................-55°C to +125°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C Soldering Temperature (reflow) PDIP, Wide SO, Narrow SO, CERDIP containing lead(Pb)..+240°C PDIP, Wide SO, Narrow SO lead(Pb)-free ....................+260°C Note 1: Signals on S_ or D_ exceeding V+ or V- are clamped by internal diodes. Limit forward-diode current to maximum current ratings DG508AA/M DG509AA/M DG508AD/E/B/C DG509AD/E/B/C PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX UNITS SWITCH Analog Signal VANALOG -15 +15 -15 +15 V VD = 10V, IS = -200μA 170 400 170 450 Drain-Source On- Resistance RDS(ON) Sequence each switch on, VA_L = 0.8V, VA_H = 2.4V (Note 4) VD = -10V, IS = 200μA 130 400 130 450 Greatest Change in Drain-Source On-Resistance Between Channels RDS(ON) RDS(ON) = RDS(ON) max RDS(ON) min RDS(ON) -10V VS 10V 6 6 % VS = 10V, VD = -10V 0.002 0.5 0.002 1 Source Off- Leakage Current IS(OFF) VEN = 0V VS = -10V, VD = 10V -0.5 -0.005 -1 -0.005 nA VD = 10V, VS = -10V 0.01 2 0.01 5 DG508A VD = -10V, VS = 10V -2 -0.015 -5 -0.015 VD = 10V, VS = -10V 0.005 2 0.005 5 Drain Off- Leakage Current DG509A ID(OFF) VEN = 0V VD = -10V, VS = 10V -2 -0.008 -5 -0.008 nA VS(all) = VD = 10V 0.015 2 0.015 5 DG508A VS(all) = VD = -10V -2 -0.03 -5 -0.03 VS(all) = VD = 10V 0.007 2 0.007 5 Drain On- Leakage Current DG509A ID(ON) Sequence each switch on, VA_L = 0.8V VA_H = 2.4V (Note 2) VS(all) = VD = -10V -2 -0.015 -5 -0.015 nA |
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