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TPC8211 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC8211 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8211 2007-01-16 4 0 12 0 1 4 4 10 Common source VDS = 10 V Pulse test 23 25 100 Ta = −55°C ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID 0.1 1 10 100 0.1 1 10 100 Common source VDS = 10 V Pulse test Ta = 100°C −55°C 25°C RDS (ON) – ID 0.1 1 10 100 Common source Ta = 25°C Pulse test 1 1000 VGS = 10 V VGS = 4.5 V 10 100 0.8 1.2 1.6 2.0 0 4 6 8 10 2 00.4 VGS = 2.4 V 2.6 2.7 2.8 3 2.9 5 8 10 Common source Ta = 25°C Pulse test Drain −source voltage VDS (V) Drain −source voltage VDS (V) Gate −source voltage VGS (V) Gate −source voltage VGS (V) Drain current ID (A) Drain current ID (A) 10 0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 VGS = 2.3 V 2.7 2.9 2.8 2.4 2.6 2.5 8 Common source Ta = 25°C Pulse test 04 8 20 0 0.6 1.0 0.8 0.2 0.4 ID = 1.5A 5.5 Common source Ta = 25°C Pulse test 12 16 3 4 3.2 5 3 4 3.5 3.2 3.1 6 8 2 |
Similar Part No. - TPC8211_07 |
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Similar Description - TPC8211_07 |
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