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2SK3462 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SK3462 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK3462 2010-02-05 3 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS VDS – VGS Drain current ID (A) ⎪Yfs⎪ – ID Drain current ID (A) RDS (ON) − ID 6 Tc = −55°C 0 0 2 4 2 4 6 1 3 5 25 100 Common source VDS = 10 V Pulse test 1 3 5 25 Tc = −55°C 100 10 0.1 3 0.1 0.5 3 10 Common source VDS = 10 V Pulse test 1 5 0.3 0.5 1 0.3 5 0 2 4 6 0 10 20 30 VGS = 4 V Common source Tc = 25°C Pulse test 4.5 5 5.5 6 8 10 15 0 0 4 6 10 12 20 Common source Tc = 25°C Pulse test 16 3A 2 8 48 ID = 1 A Gate-source voltage VGS (V) 0.1 0.01 1 10 0.1 1 10 0.5 5 0.03 0.3 3 0.3 3 Common source Tc = 25°C VGS = 10 V Pulse test 4.6 0 0 1 2 3 2 4 6 VGS = 4 V 4.2 Common source Tc = 25°C Pulse test 4.4 6 8 10 15 |
Similar Part No. - 2SK3462_10 |
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Similar Description - 2SK3462_10 |
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