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2SK3403 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3403 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3403 2010-04-13 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cut-off current IDSS VDS = 450 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 450 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 6 A ⎯ 0.29 0.4 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 6 A 3.0 5.8 ⎯ S Input capacitance Ciss ⎯ 1600 ⎯ Reverse transfer capacitance Crss ⎯ 17 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 220 ⎯ pF Rise time tr ⎯ 28 ⎯ Turn-on time ton ⎯ 45 ⎯ Fall time tf ⎯ 10 ⎯ Switching time Turn-off time toff ⎯ 56 ⎯ ns Total gate charge Qg ⎯ 34 ⎯ Gate-source charge Qgs ⎯ 19 ⎯ Gate-drain charge Qgd VDD ≈ 360 V, VGS = 10 V, ID = 13 A ⎯ 15 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 13 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 52 A Forward voltage (diode) VDSF IDR = 13 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 300 ⎯ ns Reverse recovery charge Qrr IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 3.4 ⎯ μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Lot No. Note 4 K3403 Part No. (or abbreviation code) Duty ≤ 1%, tw = 10 μs 0 V 10 V VGS RL = 33.3 Ω VDD ≈ 200 V ID = 6 A Output |
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