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2SK3399 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3399 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3399 2009-09-29 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V(BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 5 A ⎯ 0.54 0.75 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 5 A 2.0 5.2 ⎯ S Input capacitance Ciss ⎯ 1750 ⎯ Reverse transfer capacitance Crss ⎯ 11 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 170 ⎯ pF Rise time tr ⎯ 15 ⎯ Turn-on time ton ⎯ 40 ⎯ Fall time tf ⎯ 8 ⎯ Switching time Turn-off time toff ⎯ 35 ⎯ ns Total gate charge (Gate-source plus gate-drain) Qg ⎯ 35 ⎯ Gate-source charge Qgs ⎯ 15 ⎯ Gate-drain (“Miller”) charge Qgd VDD ∼− 400 V, VGS = 10 V, ID = 10 A ⎯ 20 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 10 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 40 A Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1300 ⎯ ns Reverse recovery charge Qrr IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 16 ⎯ μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Lot No. Note 4 K3399 Part No. (or abbreviation code) VIN: tr, tf < 5 ns Duty <= 1%, tw = 10 μs 0 V 10 V VGS RL = 40 Ω VDD ∼− 200 V ID = 5 A VOUT |
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