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2SK3373 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3373 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3373 2010-04-13 4 Case temperature Tc (°C) RDS (ON) − Tc Drain-source voltage VDS (V) IDR − VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth − Tc Case temperature Tc (°C) PD − Tc Total gate charge Qg (nC) Dynamic input/output characteristics 10 1000 30 100 1 0.1 100 10 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C 2 5 50 300 500 0.3 0.5 3 5 30 50 5 1 3 2 4 0 −80 0 40 80 120 160 −40 Common source VDS = 10 V ID = 1 mA Pulse test 25 5 15 10 20 0 0 80 120 200 40 160 500 100 300 200 400 0 0 8 12 16 20 4 Common source ID = 2 A Tc = 25°C Pulse test 200 VDD = 400 V VDS VGS 20 4 12 8 16 0 100 0.01 10 0.03 0.3 3 −0.2 0 −1.2 −0.6 −0.4 −0.8 −1.0 10 3 1 VGS = 0, −1 V 1 0.1 Common source Tc = 25°C Pulse test 0 10 2 6 4 8 −40 −80 160 0 40 80 Common source VGS = 10 V Pulse test ID = 2 A 0.5 1 |
Similar Part No. - 2SK3373_10 |
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Similar Description - 2SK3373_10 |
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