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2SK3176 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3176 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3176 2009-09-29 5 0.003 100 m 10 m 0.01 1 1 10 0.005 0.3 3 0.03 0.5 0.05 0.1 10 μ 100 μ 1 m Duty = 0.5 0.02 0.2 0.1 0.05 Single pulse 0.01 T PDM t Duty = t/T Rth (ch-c) = 0.833°C/W rth – tw Pulse width tw (s) Safe Operating Area EAS – Tch Channel temperature (initial) Tch (°C) Test circuit Wave form IAR BVDSS VDD VDS RG = 25 Ω VDD = 50 V, L = 1.66 mH ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − = V B B · ·L·I 2 1 Ε DD VDSS VDSS 2 AS −15 V 15 V 0 25 400 1000 150 75 200 600 800 50 100 125 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (continuous) ID max (pulse)* VDSS max 1 ms* 100 μs* DC operation Tc = 25°C 0.1 1 3 5 10 30 50 100 10 30 300 500 1 5 50 100 300 3 0.3 0.5 Drain-source voltage VDS (V) |
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