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2SK3128 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3128 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 2SK3128 2009-09-29 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 30 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 30 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 — 3.0 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 30 A — 9.5 12 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 30 A 20 40 — S Input capacitance Ciss — 2300 — Reverse transfer capacitance Crss — 380 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 1100 — pF Rise time tr — 12 — Turn−on time ton — 25 — Fall time tf — 75 — Switching time Turn−off time toff — 200 — ns Total gate charge (Gate−source plus gate−drain) Qg — 66 — Gate−source charge Qgs — 45 — Gate−drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 60 A — 21 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 60 A Pulse drain reverse current (Note 1) IDRP — — — 180 A Forward voltage (diode) VDSF IDR = 60 A, VGS = 0 V — — −1.5 V Reverse recovery time trr — 150 — ns Reverse recovery charge Qrr IDR = 60 A, VGS = 0 V, dIDR / dt = 50 A / μs — 0.26 — μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. K3128 TOSHIBA Lot No. Note 4 Part No. (or abbreviation code) |
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