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2SK2989 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SK2989 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK2989 2009-09-29 3 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) |Yfs| – ID Drain current ID (A) RDS (ON) – ID 4 6 8 10 0 4 6 8 10 2 02 8 12 16 20 0 0.8 12 1.6 2.0 0.4 04 110 0.1 1 0.1 1 10 0.01 0.1 0 1 2 3 4 5 0.8 1.2 1.6 2.0 0 0.4 4 8 0 4 6 8 10 2 0 2 10 10 1.0 VGS = 2.5V 3 3.5 4 5 8 10 6 Ta = −55°C 100 25 ID = 5 A 1.3 2.5 6 0. 1 Common source Ta = 25°C Pulse Test VGS = 4 V 10 VGS = 2.5 V 3 3.5 4 8 10 6 5 Common source Ta = 25°C Pulse Test Common source Ta = 25°C Pulse Test Common source VDS = 10 V Pulse Test Common source Ta = 25℃ Pulse Test Ta = −55°C 25 100 Common source VDS = 10 V Pulse Test |
Similar Part No. - 2SK2989_09 |
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Similar Description - 2SK2989_09 |
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