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ZXSC100 Datasheet(PDF) 3 Page - Zetex Semiconductors |
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ZXSC100 Datasheet(HTML) 3 Page - Zetex Semiconductors |
3 / 19 page ZXSC100 ISSUE 1 - JANUARY 2001 3 ELECTRICAL CHARACTERISTICS: AC PARAMETERS 2 TEST CONDITIONS (Unless otherwise stated) ) VCC=1.2V, TA = 25°C Symbol Parameter Conditions Min Typ Max Units TOFF Discharge Pulse Width 1.7 3 4 µs FOSC Recommended operating frequency 3 200 kHz 2 These parameters guaranteed by Design 3 Operating frequency is application circuit dependant. See applications section ZXT14N20DX For the circuits described in the applications section, Zetex ZXT14N20DX is the recommended pass transistor. The following indicates outline data for the ZXT, more detailed information can be found in the Zetex SuperSOT4 data book or at www.zetex.com ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CEO 20 30 V IC=10mA* Collector-Emitter Saturation Voltage VCE(sat) 4.5 30 75 6 45 95 mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=4A, IB=40mA* *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤2% ZHCS2000 For the circuits described in the applications section Zetex ZHCS2000 is the recommended Schottky diode. The following indicates outline data for the ZHCS, more detailed information is available at www.zetex.com ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Forward Voltage VF 385 500 mV mV IF=1A IF=2A Reverse Current IR 300 µA VR=30V Reverse Recovery Time trr 5.5 ns Switched from IF = 500mA to IR = 500mA. Measured at IR=50mA *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% 3 |
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