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RB521S30 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # RB521S30
Description  200 mA low VF MEGA Schottky barrier rectifier
Download  12 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

RB521S30 Datasheet(HTML) 2 Page - NXP Semiconductors

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RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
2 of 12
NXP Semiconductors
RB521S30
200 mA low VF MEGA Schottky barrier rectifier
2.
Pinning information
[1]
The marking bar indicates the cathode.
3.
Ordering information
4.
Marking
5.
Limiting values
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
cathode
[1]
2
anode
2
1
sym001
12
Table 3.
Ordering information
Type number
Package
Name
Description
Version
RB521S30
SC-79
plastic surface-mounted package; 2 leads
SOD523
Table 4.
Marking codes
Type number
Marking code
RB521S30
ZB
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj =25 °C
-
30
V
IF(AV)
average forward current
square wave;
δ = 0.5;
f=20kHz
Tamb ≤ 120 °C
[1] -
0.2
A
Tsp ≤ 140 °C
-
0.2
A
IFSM
non-repetitive peak
forward current
tp = 8.3 ms
half sine wave;
JEDEC method
[2] -1
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[3][4] -
275
mW
[3][1] -
420
mW
[3][5] -
500
mW


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