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RB520S30 Datasheet(PDF) 6 Page - NXP Semiconductors |
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RB520S30 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 6 of 12 NXP Semiconductors RB520S30 200 mA low VF MEGA Schottky barrier rectifier f = 1 MHz; Tamb =25 °CTj = 150 °C (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ =1 Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Average forward power dissipation as a function of average forward current; typical values Tj = 125 °C (1) δ =1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 FR4 PCB, standard footprint Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 7. Average reverse power dissipation as a function of reverse voltage; typical values Fig 8. Average forward current as a function of ambient temperature; typical values VR (V) 030 20 10 006aab704 35 Cd (pF) 0 5 10 15 20 25 30 006aab705 IF(AV) (A) 0.0 0.3 0.2 0.1 0.08 0.12 0.04 0.16 0.20 PF(AV) (W) 0.0 (1) (2) (3) (4) 006aab706 VR (V) 030 20 10 0.004 0.006 0.002 0.008 0.01 PR(AV) (W) 0.0 (1) (2) (3) (4) Tamb (°C) 0 50 100 150 175 125 75 25 006aab707 0.1 0.2 0.3 IF(AV) (A) 0.0 (1) (2) (3) (4) |
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