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RB520S30 Datasheet(PDF) 4 Page - NXP Semiconductors |
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RB520S30 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 4 of 12 NXP Semiconductors RB520S30 200 mA low VF MEGA Schottky barrier rectifier FR4 PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values FR4 PCB, mounting pad for cathode 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab700 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 102 10 103 Zth(j-a) (K/W) 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0 006aab701 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 102 10 103 Zth(j-a) (K/W) 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0 |
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