Si8220CD-A-IS datasheet(4/28 Pages) SILABS

Part #	Si8220CD-A-IS

Description	0.5 AND 2.5 AMP ISODRIVERS WITH OPTO INPUT (2.5, 3.75, AND 5.0 KVRMS)

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Manufacturer	SILABS [Silicon Laboratories]

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4 / 28 page

Si8220/21

4

Rev. 0.22

1. Electrical Specifications

Table 1. Electrical Characteristics 1

VDD =12V or 15 V, VSS = GND, TA = –40 to +125 °C; typical specs at 25 °C.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

DC Specifications

Power supply voltage

VDD

(VDD – VSS)6.5

—

24

V

Input current (ON)

IF(ON)

5.0

—

20

mA

Input current rising edge

hysteresis

IHYS

—1.0

—

mA

Input voltage (OFF)

VF(OFF)

Measured at ANODE with

respect to CATHODE.

–

0.6

—

1.6

V

Input forward voltage

VF

Measured at ANODE with

respect to CATHODE.

IF =5 mA.

1.7

—

2.5

V

Output resistance high (source)

ROH

0.5 A devices

—

15

—



2.5 A devices

—

2.7

—

Output resistance low (sink)

ROL

0.5 A devices

—

5.0

—

2.5 A devices

—

1.0

—

Output high current (source)

IOH

(0.5 A), IF =0

(see Figure 2)

—0.3

—

A

(2.5 A), IF =0

(see Figure 2)

—1.5

—

Output low current (sink)

IOL

(0.5 A), IF =10mA,

(see Figure 1)

—0.5

—

A

(2.5 A), IF =10mA,

(see Figure 1)

—2.5

—

High-level output voltage

VOH

(0.5 A), I OUT = –50 mA

—

VDD–0.5

—

V

(2.5 A), I OUT = –50 mA

VDD–0.1

Low-level output voltage

VOL

(0.5 A), I OUT =50mA

—

200

—

mV

(2.5 A), I OUT =50mA

50

High level supply current

Output open IF =10mA

—

1.2

—

mA

Low level supply current

Output open

VF = –0.6 to +1.6 V

—1.4

—

mA

Input reverse voltage

BVR

IR =10 mA.

Measured at ANODE with

respect to CATHODE.

0.5

—

V

Input capacitance

CIN

—5

—

pF

Notes:

1. VDD = 12 V for 5, 8, and 10 V UVLO devices; VDD = 15 V for 12.5 V UVLO devices.

2. See "9.Ordering Guide" on page 21 for more information.

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