PSMN038-100K_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 25 November 2009

2 of 12

NXP Semiconductors

PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

2.

Pinning information

3.

Ordering information

4.

Limiting values

Table 2.

Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1S

source

SOT96-1 (SO8)

2S

source

3S

source

4G

gate

5D

drain

6D

drain

7D

drain

8D

drain

4

5

1

8

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN038-100K

SO8

plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

100

V

gate-source voltage

-20

20

V

drain current

-6.3

A

peak drain current

-50

A

total power dissipation

-3.5

W

storage temperature

-55

150

°C

junction temperature

-55

150

°C

Source-drain diode

source current

-

3.1

A

peak source current

-

50

A