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TPCP8202 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPCP8202 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCP8202 2008-03-21 1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) TPCP8202 Portable Equipment Applications Motor Drive Applications DC-DC Converters • Lead(Pb)-Free • Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.) • Low leakage current: IDSS = 10 μA (max)(VDS = 30 V) • Enhancement model: Vth = 0.7 to 1.4V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±12 V DC (Note 1) ID 5.5 Drain current Pulse (Note 1) IDP 22 A Single-device operation (Note 3a) PD (1) 1.48 Drain power dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (2) 1.23 Single-device operation (Note 3a) PD (1) 0.58 Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.36 W Single-pulse avalanche energy (Note 4) EAS 7.86 mJ Avalanche current IAR 5.5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.12 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 6, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 2-3V1G Weight: 0.017 g (typ.) Circuit Configuration Marking (Note 6) 1 2 3 4 8 7 6 5 0.33±0.05 0.28+0.1 -0.11 1.12+0.13 -0.12 0.475 0.65 A 0.05 M 2.9±0.1 4 1 5 8 0.8±0.05 0.17±0.02 B B 0.05 M A S 0.025 S 1.12+0.13 -0.12 0.28+0.1 -0.11 5. Drain2 6. Dain2 7. Drain1 8. Drain1 1. Source1 2. Gate1 3. Source2 4. Gate2 8202 1 2 3 4 8 7 6 5 ※ Lot No. |
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