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TPCA8128 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8128 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 7 page  TPCA8128 2010-01-07 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 10 V (Note 5) −21 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −0.5mA −0.8 ⎯ −2.0 V VGS = −4.5 V, ID = −17 A ⎯ 5.1 6.7 Drain-source ON resistance RDS (ON) VGS = −10 V, ID = −17 A ⎯ 3.7 4.8 m Ω Input capacitance Ciss ⎯ 4800 ⎯ Reverse transfer capacitance Crss ⎯ 800 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 900 ⎯ pF Rise time tr ⎯ 11 ⎯ Turn-on time ton ⎯ 21 ⎯ Fall time tf ⎯ 135 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 390 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 115 ⎯ Gate-source charge 1 Qgs1 ⎯ 11 ⎯ Gate-drain (“Miller”) charge Qgd VDD ≈ −24 V, VGS = −10 V ID = −34 A ⎯ 30 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −102 A Forward voltage (diode) VDSF IDR = −34 A, VGS = 0 V ⎯ ⎯ 1.2 V Note 5: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum rating of drain-source voltage. VDD ≈ −15 V 0 V VGS −10 V ID = −17A Output |
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