PSMN9R5-100PS

N-channel 100 V 9.6 m

Ω standard level MOSFET in T0220

Rev. 02 — 23 February 2010

Product data sheet

1.

Product profile

1.1 General description

Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

High efficiency due to low switching

and conduction losses

Suitable for standard level gate drive

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

100

V

drain current

see Figure 1

--89

A

total power

dissipation

--211

W

Dynamic characteristics

gate-drain charge

and 15

-23

-

nC

total gate charge

-

82

-

nC

Static characteristics

drain-source

on-state resistance

-

8.16

9.6

m

Ω