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PSMN9R5-100PS Datasheet(PDF) 7 Page - NXP Semiconductors |
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PSMN9R5-100PS Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page PSMN9R5-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 23 February 2010 7 of 14 NXP Semiconductors PSMN9R5-100PS N-channel 100 V 9.6 m Ω standard level MOSFET in T0220 Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical valuesvalues Fig 10. Sub-threshold drain current as a function of gate-source voltage Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aae020 0 20 40 60 80 0246 VGS (V) ID (A) Tj = 25 °C Tj = 175 °C 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max Tj (°C) −60 180 120 060 003aad280 2 3 1 4 5 VGS(th) (V) 0 max typ min 003aad774 0 0.8 1.6 2.4 3.2 -60 0 60 120 180 Tj (°C) a |
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