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PSMN9R0-30LL Datasheet(PDF) 4 Page - NXP Semiconductors |
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PSMN9R0-30LL Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page PSMN9R0-30LL_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Objective data sheet Rev. 01 — 12 February 2010 4 of 13 NXP Semiconductors PSMN9R0-30LL N-channel QFN3333 30 V 9 m Ω logic level MOSFET RDSon drain-source on-state resistance VGS =10V; ID =7.5 A; Tj =100 °C; see Figure 10 --11.9 m Ω VGS =10V; ID =7.5 A; Tj =150 °C; see Figure 10 - 14.4 16.2 m Ω VGS =10V; ID =7.5 A; Tj = 25 °C; see Figure 11 -8 9 m Ω RG internal gate resistance (AC) f=1MHz - 1.46 - Ω Dynamic characteristics QG(tot) total gate charge ID =10A; VDS =15V; VGS =10V; see Figure 12 and 15 - 20.6 - nC ID =0A; VDS =0V; VGS = 10 V - 18.6 - nC QGS gate-source charge ID =10A; VDS =15V; VGS =10V; see Figure 12 -3.4 - nC QGS(th) pre-threshold gate-source charge -1.9 - nC QGS(th-pl) post-threshold gate-source charge -1.4 - nC QGD gate-drain charge ID =10A; VDS =15V; VGS =10V; see Figure 12 and 15 -2.9 - nC VGS(pl) gate-source plateau voltage ID =10A; VDS =15V; see Figure 12 and 15 -2.6 - V Ciss input capacitance VDS =15V; VGS = 0 V; f = 1 MHz; Tj =25°C; see Figure 13 - 1193 - pF Coss output capacitance - 223 - pF Crss reverse transfer capacitance - 106 - pF td(on) turn-on delay time VDS =15V; RL =1.5 Ω; VGS =10V; RG(ext) =4.7 Ω; Tj =25°C -16 - ns tr rise time - 18 - ns td(off) turn-off delay time - 22 - ns tf fall time - 8 - ns Source-drain diode VSD source-drain voltage IS = 7.5 A; VGS =0V; Tj =25°C; see Figure 14 - 0.85 1.2 V trr reverse recovery time IS =10A; dIS/dt = 100 A/µs; VGS =0V; VDS =15V -30 - ns Qr recovered charge - 22 - nC Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit |
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