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PSMN9R0-30LL Datasheet(PDF) 4 Page - NXP Semiconductors

Part # PSMN9R0-30LL
Description  N-channel QFN3333 30 V 9 m廓 logic level MOSFET
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PSMN9R0-30LL Datasheet(HTML) 4 Page - NXP Semiconductors

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PSMN9R0-30LL_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Objective data sheet
Rev. 01 — 12 February 2010
4 of 13
NXP Semiconductors
PSMN9R0-30LL
N-channel QFN3333 30 V 9 m
Ω logic level MOSFET
RDSon
drain-source on-state
resistance
VGS =10V; ID =7.5 A; Tj =100 °C; see
Figure 10
--11.9
m
VGS =10V; ID =7.5 A; Tj =150 °C; see
Figure 10
-
14.4
16.2
m
VGS =10V; ID =7.5 A; Tj = 25 °C; see
Figure 11
-8
9
m
RG
internal gate resistance
(AC)
f=1MHz
-
1.46
-
Dynamic characteristics
QG(tot)
total gate charge
ID =10A; VDS =15V; VGS =10V; see
Figure 12 and 15
-
20.6
-
nC
ID =0A; VDS =0V; VGS = 10 V
-
18.6
-
nC
QGS
gate-source charge
ID =10A; VDS =15V; VGS =10V; see
Figure 12
-3.4
-
nC
QGS(th)
pre-threshold
gate-source charge
-1.9
-
nC
QGS(th-pl)
post-threshold
gate-source charge
-1.4
-
nC
QGD
gate-drain charge
ID =10A; VDS =15V; VGS =10V; see
Figure 12 and 15
-2.9
-
nC
VGS(pl)
gate-source plateau
voltage
ID =10A; VDS =15V; see Figure 12 and
15
-2.6
-
V
Ciss
input capacitance
VDS =15V; VGS = 0 V; f = 1 MHz;
Tj =25°C; see Figure 13
-
1193
-
pF
Coss
output capacitance
-
223
-
pF
Crss
reverse transfer
capacitance
-
106
-
pF
td(on)
turn-on delay time
VDS =15V; RL =1.5 Ω; VGS =10V;
RG(ext) =4.7 Ω; Tj =25°C
-16
-
ns
tr
rise time
-
18
-
ns
td(off)
turn-off delay time
-
22
-
ns
tf
fall time
-
8
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 7.5 A; VGS =0V; Tj =25°C; see
Figure 14
-
0.85
1.2
V
trr
reverse recovery time
IS =10A; dIS/dt = 100 A/µs; VGS =0V;
VDS =15V
-30
-
ns
Qr
recovered charge
-
22
-
nC
Table 6.
Characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit


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