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TPC6113 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPC6113 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC6113 2009-12-26 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±12 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 8 V (Note 6) −12 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −0.2 mA −0.5 ⎯ −1.2 V RDS (ON) VGS = −2.5 V, ID = −2.5 A ⎯ 56 85 Drain-source ON-resistance RDS (ON) VGS = −4.5 V, ID = −2.5 A ⎯ 38 55 m Ω Input capacitance Ciss ⎯ 690 ⎯ Reverse transfer capacitance Crss ⎯ 93 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 117 ⎯ pF Rise time tr ⎯ 6 ⎯ Turn-on time ton ⎯ 13 ⎯ Fall time tf ⎯ 25 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 81 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 10 ⎯ Gate-source charge 1 Qgs1 ⎯ 1.3 ⎯ Gate-drain (“miller”) charge Qgd VDD ≈ −16 V, VGS = −5 V, ID = −5 A ⎯ 2.8 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Note 6: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum rating of drain-source voltage. Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP — — — −20 A Forward voltage (diode) VDSF IDR = −5 A, VGS = 0 V — — 1.2 V VDD ≈ −10 V 0 V VGS −5V ID = −2.5 A VOUT |
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